The three-phase design helps develop energy electronics with gate drivers, fault detection, isolation, SPI communication, and compliance with security requirements.
RDGD31603PHSEVM is a three-phase reference design from NXP Semiconductors outfitted with six GD3160 gate drivers for IGBT/SiC MOSFET units. The design simplifies the event and testing of energy electronics programs, facilitating system configuration and efficiency assessments comparable to SC or double pulse checks on a single part with out customized software program. By adopting a reference design for a particular inverter utility, engineers can cut back the time to market. Utilizing this reference design, the designers can cut back general system prices.
The great analysis platform encompasses a complete three-phase inverter system, together with six gate drivers with strong fault administration and extra help circuits. It options programmable and communicable capabilities by SPI daisy chain communication, permitting separate focusing on of three high-side and three low-side gate drivers.
The board integrates low-voltage and high-voltage isolation and supplies galvanic sign isolation particular to the gate drivers. It helps varied functionalities, comparable to desaturation short-circuit detection, temperature monitoring for IGBT/SiC units, DC hyperlink bus voltage monitoring, part present sensing, and circuits designed for motor resolver excitation and sign processing.
Working from a 12 V DC main energy supply, sometimes a automobile battery, the low-voltage area powers nonisolated circuits and facilitates the interplay between the MCU and the GD3160 management registers alongside the logic management.
The board’s structure consists of remoted high-voltage management areas for low-side and high-side driver domains tailor-made for SiC MOSFET or IGBT single-phase connections and their respective management circuits. It additionally options simple connectivity choices for appropriate three-phase SiC MOSFET or IGBT modules.
Key options of the gate driver embrace {an electrical} isolation functionality of as much as 8,000 volts to reinforce security and strong output dealing with as much as 15 amperes for environment friendly switching operations. It helps SPI communication for real-time system standing updates, configuration changes, and diagnostic capabilities. Security mechanisms are in place to allow fast and protected shutdowns throughout emergencies in each low- and high-voltage domains.
Moreover, the motive force is appropriate with varied temperature sensors for complete security checks and incorporates settings to mitigate overcurrent situations crucial for SiC and IGBT semiconductors. It permits for managed power-down sequences, important for successfully managing these semiconductors. The gate driver is obtainable in numerous variations to accommodate various operational voltages and complies with ISO 26262, making certain adherence to the very best security requirements.
NXP has examined this reference design. It comes with a invoice of supplies (BOM), schematics, meeting drawing, printed circuit board (PCB) structure, and extra. The corporate’s web site has extra knowledge in regards to the reference design. To learn extra about this reference design, click on right here.
